NXH004P120M3F2PTNG
NXH004P120M3F2PTNG
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NXH004P120M3F2PTNG
Product_Category
FET, MOSFET Arrays
Manufacturer
Sanyo Semiconductor/onsemi
Description
SILICON CARBIDE (SIC) MODULE EL
Encapsulation
Packages
Tray
RoHS
YES
Price
$211.9320
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Specifications
PDF(1)
TYPEDESCRIPTION
MfrSanyo Semiconductor/onsemi
Series-
PackageTray
Product StatusACTIVE
Package / CaseModule
Mounting TypeChassis Mount
Configuration2 N-Channel (Half Bridge)
Operating Temperature-40°C ~ 175°C (TJ)
TechnologySilicon Carbide (SiC)
Power - Max1.1kW (Tj)
Drain to Source Voltage (Vdss)1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C338A (Tj)
Input Capacitance (Ciss) (Max) @ Vds16410pF @ 800V
Rds On (Max) @ Id, Vgs5.5mOhm @ 200A, 18V
Gate Charge (Qg) (Max) @ Vgs876nC @ 20V
Vgs(th) (Max) @ Id4.4V @ 120mA
Supplier Device Package36-PIM (56.7x62.8)
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